BAV19W-V-G, bav20w-v-g, bav21w-v-g document number 85188 rev. 1.1, 26-nov-10 vishay semiconductors www.vishay.com 1 17431 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diodes, high voltage features ? silicon epitaxial planar diodes ? for general purpose ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 9.4 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified note 1) valid provided that leads are kept at ambient temperature ** please see document ?vishay material category policy? www.vishay.com/doc?99902 part type differentiation ordering code marking remarks BAV19W-V-G v r = 100 v BAV19W-V-G-18 or BAV19W-V-G-08 as tape and reel bav20w-v-g v r = 150 v bav20w-v-g-18 or bav20w-v-g-08 at tape and reel bav21w-v-g v r = 200 v bav21w-v-g-18 or bav21w-v-g-08 au tape and reel parameter test condition part symbol value unit continuous reverse voltage BAV19W-V-G v r 100 v bav20w-v-g v r 150 v bav21w-v-g v r 200 v repetitive peak voltage BAV19W-V-G v rrm 120 v bav20w-v-g v rrm 200 v bav21w-v-g v rrm 250 v dc forward current i f 250 1) ma rectified current (average) half wave rectification with resist. load i f(av) 200 1) ma repetitive peak forward current f 50 hz i frm 625 1) ma surge forward current t < 1 s i fsm 1a power dissipation p tot 410 1) mw
www.vishay.com 2 document number 85188 rev. 1.1, 26-nov-10 BAV19W-V-G, bav20w-v-g, bav21w-v-g vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified note 1) valid provided that leads ar e kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air r thja 375 1) k/w junction temperature t j 150 1) c storage temperature range t stg - 65 to + 150 1) c parameter test condition part symbol min. ty p. max. unit forward voltage i f = 100 ma v f 1000 mv i f = 200 ma v f 1250 mv leakage current v r = 100 v BAV19W-V-G i r 100 na v r = 100 v, t j = 100 c BAV19W-V-G i r 15 a v r = 150 v bav20w-v-g i r 100 na v r = 150 v, t j = 100 c bav20w-v-g i r 15 a v r = 200 v bav21w-v-g i r 100 na v r = 200 v, t j = 100 c bav21w-v-g i r 15 a dynamic forward resistance i f = 10 ma r f 5 diode capacitance v r = 0, f = 1 mhz c d 1.5 pf reverse recovery time i f = 30 ma, i r = 30 ma, i r = 3 ma, r l = 100 t rr 50 ns
BAV19W-V-G, bav20w-v-g, bav21w-v-g document number 85188 rev. 1.1, 26-nov-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com typical characteristics t amb = 25 c, unless otherwise specified figure 1. forward current vs. forward voltage figure 2. admissible forward cu rrent vs. ambient temperature figure 3. admissible power dissi pation vs. ambient temperature 1 88 5 8 1000 100 10 1 0.1 0.01 i- for w ard c u rrent (ma) f 0 0.4 0.6 0. 8 1 0.2 v f - for w ard v oltage ( v ) t j = 100 c 25 c 0.1 0.2 0.3 0 0 30 60 90 120 150 1 88 59 t am b - am b ient temperat u re (c) i , i - admissi b le for w ard c u rrent (a) of i c u rrent (rectif.) o dc c u rrent i f 21937 t am b - am b ient temperat u re (c) p tot - admissi b le po w er dissipation (m w ) 0 100 200 300 400 500 600 0204060 8 0 100 120 140 figure 4. dynamic forward resistance vs. forward current figure 5. leakage current vs . junction temperature figure 6. diodes capacitance vs. reverse voltage r - dynamic for w ard resistance f () 10 100 1 1 100 10 1 88 61 i f - for w ard c u rrent (ma) 0.1 1 88 62-1 1 10 100 1000 040 8 0 120 160 200 i r (t j )/i r (25 c) - leakage c u rrent t j - j u nction temperat u re (c) re v erse v oltage ba v 19 w - v -g v r = 100 v ba v 20 w - v -g v r = 150 v ba v 21 w - v -g v r = 200 v 21942 0. 8 0.6 0.4 1.4 1.2 1.0 0.2 0 c - diode capacitance (pf) d v r - re v erse v oltage ( v ) 2.0 1. 8 1.6 0 5 10 15 20 25 30 35
www.vishay.com 4 document number 85188 rev. 1.1, 26-nov-10 BAV19W-V-G, bav20w-v-g, bav21w-v-g vishay semiconductors for technical questions with in your region, please c ontact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-123 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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